METHOD OF FORMING CONTACT AND SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method is provided to form a contact between a diffusion area and a gate conductor on a substrate able to offer a direct low resistive contact between devices on a semiconductor chip without leaking current excessively. CONSTITUTION: A method comprising: preparing a silicon-on insulator substrate(105); forming gate stacks(115,117) including poly silicon layers(120,122) on the substrate; forming side wall spacers(610,620) on the side wall of the gate stacks; forming a diffusion area close to the gate stacks; selectively removing the side wall spacer to form a contact; depositing titanium on the poly silicon layers and the diffusion area; annealing the titanium to form a titanium silicide(145) at a portion contacting to the poly silicon layers and the diffusion area; and removing the non-reacting portion of the titanium.