发明名称 Semiconductor memory component; has current control circuit for output driver and two voltage transmitting buffers
摘要 The control circuit has two voltage transfer devices, formed as buffers (T31,32) from two terminals (P31,P32), reacting to a current control release signal (CCTG). A voltage divider (V31) processes the voltage between the output voltages of the transfer devices and delivers a divided voltage (Vcomp), which is compared with a reference voltage (Vref) by a comparator (C31). Current control counter (D31) generates control bits (ICTR0 to CTR5) to control the current driver (O31) efficiency as a reaction to the comparator output signal. An Independent claim is included for the memory component.
申请公布号 DE19950767(A1) 申请公布日期 2000.05.25
申请号 DE19991050767 申请日期 1999.10.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG, KI-WHAN;PARK, CHAN-JONG
分类号 G11C11/409;G06F3/00;G11C7/10;G11C11/34;G11C11/401;(IPC1-7):H03K17/14;H03K17/30 主分类号 G11C11/409
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