发明名称 |
Semiconductor memory component; has current control circuit for output driver and two voltage transmitting buffers |
摘要 |
The control circuit has two voltage transfer devices, formed as buffers (T31,32) from two terminals (P31,P32), reacting to a current control release signal (CCTG). A voltage divider (V31) processes the voltage between the output voltages of the transfer devices and delivers a divided voltage (Vcomp), which is compared with a reference voltage (Vref) by a comparator (C31). Current control counter (D31) generates control bits (ICTR0 to CTR5) to control the current driver (O31) efficiency as a reaction to the comparator output signal. An Independent claim is included for the memory component.
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申请公布号 |
DE19950767(A1) |
申请公布日期 |
2000.05.25 |
申请号 |
DE19991050767 |
申请日期 |
1999.10.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG, KI-WHAN;PARK, CHAN-JONG |
分类号 |
G11C11/409;G06F3/00;G11C7/10;G11C11/34;G11C11/401;(IPC1-7):H03K17/14;H03K17/30 |
主分类号 |
G11C11/409 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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