| 摘要 |
PURPOSE: A method of forming a silicon oxide film is to provide superior property in insulting breakdown voltage and step coverage, to enhance the yield of a TFT(Thin Film Transistor) without causing any problem in treatment and cost aspect, and to be applied to both a gate oxide film and an interlayer dielectric film. CONSTITUTION: A two-frequency excited type plasma CVD(Chemical Vapor Deposition) apparatus(1) is used in forming a silicon oxide film, which comprises a high-frequency electrode(3), a susceptor electrode(6) and two matching boxes for impedance matching each electrode with a power supply, with one electrode constituting a tuning capacitor(20) of the matching box of a high-frequency side being the high-frequency electrode. A substrate(5) to be treated is placed on the susceptor electrode and a high-frequency power is applied to both the high-frequency electrode and the susceptor electrode. Simultaneously, a reaction gas consisting of the mixed gas of SiH4 gas and N2O gas is introduced into the apparatus to generate a plasma therein, forming the silicon oxide film on the substrate.
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