发明名称 POSITIVE PHOTORESIST COMPOSITION FOR EXPOSURE BY FAR UV RAY
摘要 PROBLEM TO BE SOLVED: To obtain a compsn. having good dependency on the state of a pattern whether the pattern is dense or sparse and having excellent sensitivity for a light source of short wavelength by incorporating a resin which has specified groups and alkali-soluble groups protected with groups having a specified alicyclic hydrocarbon structure and which is decomposed by the effect of an acid to increase its solubility with alkali. SOLUTION: This positive photoresist compsn. for exposure by far UV rays contains a compd. which produces an acid by irradiation of active rays or radiation and a resin which has specified groups and alkali-soluble groups protected with at least one kind of group expressed b formulae I to III having an alicyclic hydrocarbon structure and which is decomposed by the effect of an acid to increase its solubility with alkali. In formulae I to III, R11 is a methyl group, ethyl group, isobutyl, sec-butyl group or the like, z is a group of atoms necessary to form an alicyclic hydrocarbon group with carbon atoms, each of R12 to R16 is independently 1-4C straight-chain or branched alkyl group or alicyclic hydrocarbon group.
申请公布号 JP2000147776(A) 申请公布日期 2000.05.26
申请号 JP19980327054 申请日期 1998.11.17
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO;KODAMA KUNIHIKO;AOSO TOSHIAKI
分类号 H01L21/027;G03F7/039 主分类号 H01L21/027
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