MULTI LAYERED GATE ELECTRODE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are to prevent a void from being generated in a polysilicon layer when a subsequent heat treatment is processed after the patterning of a multi layered gate electrode. CONSTITUTION: A semiconductor device is divided into an active region and a passivation region by a field oxide film(102). A gate(A) formed on the active includes a polysilicon layer(106) deposited on an upper surface of a gate insulated layer(104), and an insulated layer(110) deposited on an upper surface of the polysilicon layer(106). A gate(B) formed on the passivation region includes a polysilicon layer deposited on an upper surface of a gate insulated layer(104), a metal silicide layer(108) deposited on an upper surface of the polysilicon layer, and an insulated layer deposited on an upper surface of the metal silicide layer. The gate is formed by the polysilicon layer only to essentially eliminate the generation of a void in the polysilicon layer of the active region.