Semiconductor material is deposited by chemical gas phase transport with horizontal and vertical close spacing of the substrate and source material during deposition

摘要

Semiconductor material deposition comprises chemical gas phase transport with horizontal and vertical close spacing of the substrate (4) and source material (6) during deposition. Semiconductor material deposition by chemical gas phase transport from a gaseous halogen compound (11) onto a substrate (4) comprises: (a) heating the reaction chamber (1) containing the spaced-apart semiconductor source material (6) and substrate under an inert gas stream; (b) positioning the substrate and semiconductor source material relative to one another in the deposition position by horizontal and vertical relative displacement after reaching the reaction temperature; (c) replacing the inert gas stream with a gas stream of carrier gas and halogen-containing gas (mixture) for converting the semiconductor source material into a gaseous halogen compound which is transported to the substrate; (d) adjusting the substrate temperature to below the temperature of the gaseous halogen compound for back reaction and deposition of the semiconductor material onto the substrate; (e) terminating deposition by replacing the carrier gas and halogen-containing gas with the inert gas stream and then spacing apart the coated substrate from the semiconductor source material; and (f) cooling the coated substrate. An Independent claim is also included for equipment for carrying out the above process.