METHOD OF FORMING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device forming method is provided to elevate common current gain(beta) of an emitter of a bipolar transistor formed on a substrate by forming a material layer having electrical insulating property between a substrate of a single crystalline semiconductor and a layer of a poly crystalline semiconductor. CONSTITUTION: A semiconductor device is formed by treating the surface of a substrate(3) to make a material grow discontinuously on the substrate by performing a rapid thermal oxidation at 500°C of temperature for 5 seconds. Thereafter, an oxide layer having 6 of thickness is formed and the layer is composed of a 4 angstroms thickness of native oxide and 2 angstroms thickness of oxide. The structure has about 100 of beta value. Then all oxides are removed from the surface of the single crystalline silicon substrate to remain only the native oxide shaped by exposing the silicon to atmosphere on the silicon. And the oxide grows on the surface of the single crystalline silicon by using the rapid thermal oxidation.