SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE: A semiconductor device and its manufacturing method are provided for semiconductor device using oxide dielelctric as a capacitor suitable for Large Scale Integrated circuit. CONSTITUTION: An oxide dielectric is used in a capacitor of a semiconductor device. The semiconductor device comprises a substrate(10), a lower electrode layer(11) provided on the substrate(10), an oxide dielectric layer(16) provided on the lower electrode layer(11), an upper electrode layer(17) provided on the oxide dielectric layer(16). The lower and upper electrode layer(11, 17) and the oxide dielectric layer(16) constitutes oxide dielectric capacitor. The lower electrode layer(11) has a conductive oxide layer(12). The conductive oxide layer(12) comprises 2 layers(14, 15) having same crystal structure. The layer(14) near the substrate(10) has oxigen deficiency.