METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method is provided to minimize the damage of a semiconductor substrate when forming a gate spacer and a self-aligned contact. CONSTITUTION: At least more than two gate lines(108) are formed on a semiconductor substrate(100), and first and second insulating films are deposited on the front face of the semiconductor substrate including the gate lines in order for having mutual etch selectivity. Then, an interlayer dielectric(120) is deposited on the second insulating film. A self-aligned contact opening is formed by partially etching the interlayer dielectric to expose the upper surface of the second insulating film in a region to form the self-aligned contact between the gate lines. And, gate spacers(112a-112c) are formed by anisotropic etching of the second insulating film to expose the upper surface of the first insulating film on the lower portion of the contact opening. The first insulating film is etched to expose the upper surface of the semiconductor substrate between the gate spacers on the lower portion of the contact opening. Then, the self-aligned contact is formed by filling the contact opening with a conductive film for being electrically connected with the semiconductor substrate. Thus, the contact of the semiconductor device is completed.