METHOD OF PREPARING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device preparing method is provided to shorten the time for a thermal treatment like a hydrogen sintering treatment after a metal wire formation and to keep the electrical property. CONSTITUTION: A semiconductor device preparing method comprises the steps of: installing wafers having MOS type semiconductor by using a device for providing by one sheet on a processing device by every one sheet; raising the temperature of wafers to a certain temperature by inducing hydrogen in the device when performing a hydrogen sintering treatment; performing the hydrogen sintering treatment if the temperature of the wafer becomes the certain temperature; falling the temperature under the certain temperature in a thermal treatment device; and taking the wafers. The sintering is performed within 3 minutes such that a throughput is elevated, the thermal sensitivity of the wafers and the uniformity of the temperature come to be better. A damage of a preliminary process such as MOS interface level is recovered at a short time.