发明名称 SHOWER HEAD FOR SEMICONDUCTOR VAPOR DEPOSITION EQUIPMENT
摘要 PURPOSE: A shower head for a depositing equipment of a semiconductor is provided to improve the depositing uniformity by solving the temperature inequality of processing gas by uniformly maintaining the temperature of the shower head. CONSTITUTION: A processing gas formed by a depositing gas and a carrier gas is supplied into a buffer space unit(12) of a shower head(10) and the supplied processing gas is jetted into a wafer(W) through a jetting plate(13) in the state of the wafer fixed on the upper face of a wafer chuck(2) and heated the wafer(W) in a regular temperature. The temperature inside the shower head and the temperature of the processing gas jetted between a gas path(14) and the gas path(1) are controlled by a nitrogen gas flowed through many gas paths(14) installed in the jetting plate(13) to balance the processing gas flowed in the space unit of buffer(12) with the temperature of a deposition chamber(1). A deposited film of regular thickness is formed by jetting the processing gas flowed into the space unit of buffer(12) in the upper face of the wafer(W) arrived in the wafer chuck(2).
申请公布号 KR20000028097(A) 申请公布日期 2000.05.25
申请号 KR19980046228 申请日期 1998.10.30
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 YANG, SEUNG YUN
分类号 H01L21/00;(IPC1-7):H01L21/00 主分类号 H01L21/00
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