| 摘要 |
PURPOSE: A producing method is provided to realize a fine etching process such as ruthenium or acid ruthenium proper to a steel dielectric film such as BST(Barium Strontium Titanate) and so on and a high anisotropy etching for obtaining a taper angle of more than 87 degrees. CONSTITUTION: A second film consisted of RuO2 directly on a first film of a first circumferential face of a semiconductor wafer or after passing through a middle film more than a first or a second layer is formed. Next, a third film is formed on the second film and is patterned. Then the second film is etching-processed under the existence of the patterned third film by plasma-exciting the mixed gas under a pressure decompression condition in which the staying time of the gas is less than 100msec and in a mixed gas atmosphere of which main element is oxygen added up with chlorine. Herein, the etching device includes a reaction chamber(101), a vacuum pipe(102), a control valve, a turbo molecule pump TMP, and an oil-free ventilator.
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