| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are to reduce a characteristic fluctuation and to prevent from a parasitic effect when a barrier metal consisted of a titanium material is formed on an inter-layered insulated film. CONSTITUTION: A N+ bulk region is formed on a bipolar region provided on a surface of a semiconductor device. The N+ bulk region is formed by a vapor phase diffusion of Sb2O3. A N- epitaxial layer is formed on the semiconductor device to have a sheet resistance of 1 to 5 ohm cm and a thickness of 0.7 to 2.0. A field oxide film is formed in a device divided region on the surface of the semiconductor device, so that the surface of the semiconductor device is divided into a bipolar region, a MOS region with a MOS transistor formed, and an MISC region with an MIS capacitor device formed. An oxide film is formed on the surface of the semiconductor by a heat oxidation method, and then a Si3N4 film is formed by a chemical vapor deposition. The oxide and Si3N4 are removed by using a resister pattern as a mask.
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