发明名称 |
POSITIVE PHOTORESIST COMPOSITION |
摘要 |
PURPOSE: A positive photoresist composition capable of reducing the generation of a sublimate even in the baking of a high temperature and forming the resist pattern, almost near to a rectangle, of high sensitivity and high resolution is provided. CONSTITUTION: A positive photoresist composition suitable for manufacturing the liquid crystal element such as a thin film transistor is formed by containing a beehiortho type cresolnovolak resin acquired by reacting a phenol containing at least p-creosol with an acid catalytic aldehyde, and a quinonediazide group containing composition. The 2 nuclear body content of p-creosol is less than 2.0 percent in GPC method. |
申请公布号 |
KR20000029176(A) |
申请公布日期 |
2000.05.25 |
申请号 |
KR19990045277 |
申请日期 |
1999.10.19 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
MORIO KIMITAKA;KATO DETSUYA |
分类号 |
H01L21/027;G03F7/00;G03F7/004;G03F7/022;G03F7/023;G03F7/039 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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