发明名称 POSITIVE PHOTORESIST COMPOSITION
摘要 PURPOSE: A positive photoresist composition capable of reducing the generation of a sublimate even in the baking of a high temperature and forming the resist pattern, almost near to a rectangle, of high sensitivity and high resolution is provided. CONSTITUTION: A positive photoresist composition suitable for manufacturing the liquid crystal element such as a thin film transistor is formed by containing a beehiortho type cresolnovolak resin acquired by reacting a phenol containing at least p-creosol with an acid catalytic aldehyde, and a quinonediazide group containing composition. The 2 nuclear body content of p-creosol is less than 2.0 percent in GPC method.
申请公布号 KR20000029176(A) 申请公布日期 2000.05.25
申请号 KR19990045277 申请日期 1999.10.19
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 MORIO KIMITAKA;KATO DETSUYA
分类号 H01L21/027;G03F7/00;G03F7/004;G03F7/022;G03F7/023;G03F7/039 主分类号 H01L21/027
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