METHOD FOR OPTIMIZING MARGIN WIDTH IN HYBRID PHOTORESIST

摘要

PURPOSE: A method for optimizing margin width in hybrid photoresist is provided to have a high contrast and form a hybrid photoresist as a small structure by optimizing a margin width formed on one layer of the hybrid photoresist. CONSTITUTION: A photoresist (140) is deposited on a surface of a substrate(150). A part of the photoresist (140) is selectively shielded from an optical radiation source using a mask(120) having a chrome region(130). The photoresist (140) is developed, and a part of the photoresist (140) cleans a surface of a wafer and is removed. A specific pattern related to the chrome region(130) is formed on the photoresist (140). A region corresponding to the chrome region(130) forms a pattern which is removed from the substrate(150). A hybrid photoresist material forms a photoresist pattern corresponding to a removal of a photoresist material.