发明名称 |
METHOD OF REMOVING EXHAUST GAS |
摘要 |
PURPOSE: A method is provided to prevent residual exhaust gas from being leaked outside a process chamber when opening a chock or a door of the process chamber by pumping after completely removing the residual exhaust gas in the process chamber. CONSTITUTION: A door or a chock is closed after loading a semiconductor wafer into a process chamber from a loading unit. And, pumping is operated to decrease the pressure of the process chamber to certain degree. A high frequency generator is turned on after injecting process gas into the process chamber. Then, the high frequency generator is switched off, and a gas injection valve is locked. Nitrogen gas(125) is slowly purged into the process chamber by employing a delay valve(128) for being pumped at the maximum. And, the semiconductor wafer is exhausted from the process chamber after secondarily slow-purging the nitrogen gas again.
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申请公布号 |
KR20000028131(A) |
申请公布日期 |
2000.05.25 |
申请号 |
KR19980046268 |
申请日期 |
1998.10.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, TAE HUI;JANG, SE HYO |
分类号 |
H01L21/02;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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