METHOD OF FORMING PHOTORESIST PATTERN DEFINING OPENING OF SMALL CRITICAL VALUE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY EMPLOYING THE SAME

摘要

PURPOSE: A method is provided to form a photoresist pattern defining the opening of a small critical value by employing a photoresist composition having large contrast and easily controlling the flow rate. CONSTITUTION: A material film(110) desired to be patterned on a semiconductor substrate(100) is formed, and a photoresist film(120) is formed on the material film by painting the photoresist consisting of a copolymer mixture I, a copolymer mixture II, and an organic base. Then, the photoresist film is pre-exposure baked. And, the photoresist film is exposed on a mask substrate(210) by employing a half-tone phase shift mask(200) having a half-tone phase shift pattern(220) for post-exposure baking the photoresist film in a short time again. Then, a first photoresist pattern defining the opening of first size is completed by developing with a proper developer.