| 摘要 |
PURPOSE: A method for preparing a semiconductor device is provided to prevent peeling off copper film after performing CMP(Chemical Mechanical Polishing) used for preparing a semiconductor device such as an LSI. CONSTITUTION: A preparing method comprising: forming a silicon dioxide film(11) on a semiconductor device substrate(1); flattening the silicon dioxide film; forming multiple recesses on the surface of the silicon dioxide film; forming a titanium nitride film(13) on the upper front of the silicon dioxide film; depositing a copper film(14) on a barrier metal film(13) to fill the recessed with the copper film; and polishing the copper film and the titanium nitride film by CMP to remain the copper film only in the recesses. Herein, a connection layer is formed. When polishing the copper film and the titanium nitride film using CMP, slurry formed of suspension containing alumina particles and an aqueous solution of peroxide as an oxidizing agent is used. The ratio of the suspension to the aqueous solution is 1: 1.
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