发明名称 GRINDSTONE OF RESIN FOR POLISHING SEMICONDUCTOR WAFER, PREPERATION THEREOF, AND METHOD OF POLISHING SEMIDONCUDTOR WAFER, DEVICE AND APPARATUS
摘要 PURPOSE: A grindstone is provided to prevent a semiconductor wafer from being scratched or cracked and to flatten the surface of the wafer without employing expensive slurry as a polishing agent. CONSTITUTION: A grindstone is prepared by the steps of: mixing a resin material with a polishing agent at a ratio of 18-33 to 18-33% so a grindstone as to have the porosity in a range of 45-55%; filling a molding frame with the final mixed powder; and molding the grindstone by compressing the mixed powder at a molding temperature of 100-200°C.
申请公布号 KR20000029012(A) 申请公布日期 2000.05.25
申请号 KR19990044095 申请日期 1999.10.12
申请人 HITACHI CHEMICAL CO., LTD. 发明人 OTA HIROTO;NAKAGAWA HIROSHI;TOMITA KYOICHI;NUMATA SHUNICHI
分类号 H01L21/304;B24D3/32;(IPC1-7):H01L21/304 主分类号 H01L21/304
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