发明名称 |
GRINDSTONE OF RESIN FOR POLISHING SEMICONDUCTOR WAFER, PREPERATION THEREOF, AND METHOD OF POLISHING SEMIDONCUDTOR WAFER, DEVICE AND APPARATUS |
摘要 |
PURPOSE: A grindstone is provided to prevent a semiconductor wafer from being scratched or cracked and to flatten the surface of the wafer without employing expensive slurry as a polishing agent. CONSTITUTION: A grindstone is prepared by the steps of: mixing a resin material with a polishing agent at a ratio of 18-33 to 18-33% so a grindstone as to have the porosity in a range of 45-55%; filling a molding frame with the final mixed powder; and molding the grindstone by compressing the mixed powder at a molding temperature of 100-200°C.
|
申请公布号 |
KR20000029012(A) |
申请公布日期 |
2000.05.25 |
申请号 |
KR19990044095 |
申请日期 |
1999.10.12 |
申请人 |
HITACHI CHEMICAL CO., LTD. |
发明人 |
OTA HIROTO;NAKAGAWA HIROSHI;TOMITA KYOICHI;NUMATA SHUNICHI |
分类号 |
H01L21/304;B24D3/32;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|