| 摘要 |
PURPOSE: A power semiconductor device is provided to have a withstand voltage characteristic of a bipolar transistor and a proper threshold voltage of a DMOS transistor. CONSTITUTION: A second conductive N-typed well(46) is formed on a first P-typed semiconductor substrate(42) to form a bipolar transistor and a DMOS transistor, respectively. The semiconductor substrate is provided on its surface with a field insulated film(44) to divide the well. A P-typed body region(52) is formed on the N-typed well, and a P-typed dopant region(50) is formed both sides of the P-typed body region with the bipolar transistor formed. The dopant region is formed in order of 1.0E15 atom/cm¬2 to 5.0E atom/cm¬2 to improve a withstand voltage of the bipolar transistor. A P-typed base region(62) is formed in the dopant region, and an emitter region(64) is formed in the first body region. A collector region(66) is formed in on a portion of the first region remote from the first region.
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