System for the monolithic integration of a light emitting device and a heterojunction phototransistor for low bias voltage operation

摘要

A light emitting device and heterojunction phototransistor combination (200) having a structure where a p-type material terminal (207) of a laser (220) is common with an emitter (211) of a PNP heterojunction phototransistor (210). This configuration results in a light emitting device and heterojunction phototransistor structure (200) that has a drastically reduced bias voltage requirement and that allows independent biasing of the laser (220) and the heterojunction phototransistor (210). <IMAGE>