| 发明名称 |
Hydrogen heat treatment method of silicon wafers using a high-purity inert substitution gas |
| 摘要 |
A heat treatment is performed in a hydrogen-gas containing atmosphere. A high-purity inert gas having a water content of not more than 2.57 ppm is used as a substitution gas for replacing a wafer-input air atmosphere and for replacing the hydrogen-gas containing atmosphere after the heat treatment.
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| 申请公布号 |
US6066579(A) |
申请公布日期 |
2000.05.23 |
| 申请号 |
US19970781026 |
申请日期 |
1997.01.09 |
| 申请人 |
TOSHIBA CERAMICS CO., LTD. |
发明人 |
MATSUSHITA, JUNICHI;YOSHIKAWA, JUN;SANADA, MASAYUKI;SHIMIZU, TATSUYA |
| 分类号 |
H01L21/322;H01L21/324;(IPC1-7):H01L21/324 |
主分类号 |
H01L21/322 |
| 代理机构 |
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