Hot plate cure process for BCB low k interlevel dielectric

摘要

A dielectric layer comprising a benzocyclobutene (BCB)-based low dielectric constant (low k) material is formed on a surface of a semiconductor wafer substrate by (a) spin coating a layer of a fluid material comprising BCB in a liquid solvent or dispersant vehicle on the substrate; (b) baking the coated substrate at a first temperature and for a first time interval to remove the solvent; (c) curing the baked coating by heating at a second temperature higher than the first temperature, and for a second time interval; and (d) subjecting the substrate with cured coating thereon to a cool-down treatment at a third temperature and for a third time interval. Embodiments include performing steps (a)-(d) consecutively and in the same apparatus. Other embodiments include processing in an "on track" type automated semiconductor processing apparatus.