| 摘要 |
A control circuit for Hall-effect switching device is provided. The control circuit can be used in a Hall-effect switching device to control the output of the Hall-effect switching device in response to Hall effect. The control circuit comprises a current source and two pairs of symmetrically arranged bipolar junction transistors (BJT). The particular arrangement of the BJTs allow the Hall-effect sensitivity by the Hall-effect switching device to be enhanced. The Hall-effect sensitivity can be adjusted by varying the current source in the control circuit. Moreover, the control circuit is designed with a double-output feature that allows the Hall-effect switching device to be realizable with a fewer number of transistors, allowing the Hall-effect switching device to operate with a lower working current and a lower starting voltage as compared to the prior art, thus considerably reducing power consumption.
|
