发明名称 |
Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer |
摘要 |
The present invention relates generally to an improved apparatus and process for providing uniform step coverage on a substrate and planarization of conducting layers to form continuous, void-free interconnects in sub-half micron, high aspect ratio aperture width applications and highly oriented conducting layers. In one aspect of the invention, a dielectric layer is formed over a conducting or semiconducting layer and etched to form an aperture exposing the underlying conducting or semiconducting layer on the aperture floor. An ultra-thin nucleation layer is then deposited by physical vapor deposition onto the field of the dielectric layer. A CVD metal layer is then deposited onto the structure to achieve selective deposition on the floor of the aperture, while preferably also forming a highly oriented blanket layer on the field. The present apparatus and process reduce the number of steps necessary to fabricate CVD metal interconnects and layers that are substantially void-free and planarized. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the apertures to form vias and contacts occurs without the formation of oxides between the layers.
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申请公布号 |
US6066358(A) |
申请公布日期 |
2000.05.23 |
申请号 |
US19960611108 |
申请日期 |
1996.03.05 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
GUO, TED;CHEN, LIANG;CHEN, FUSEN;MOSELY, RODERICK C. |
分类号 |
H01L21/285;C23C14/56;C23C16/54;H01L21/28;H01L21/3205;H01L21/677;H01L21/768;(IPC1-7):B05D5/12;C23C16/04;C23C16/06;C23C14/04 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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