发明名称 Timing of wordline activation for DC burn-in of a DRAM with the self-refresh
摘要 A method of testing a semiconductor circuit, the semiconductor circuit including word lines connected to a storage device, address receivers receiving addresses, an address decoder decoding the addresses and selecting ones of the word lines, a self-refresh unit refreshing the word lines during a non-test mode and a test mode device controlling the semiconductor circuit in a test mode, the method comprises supplying a test mode signal to the test mode device, activating a test mode operation of the self-refresh unit, sequentially activating the word lines using the self-refresh unit, maintaining the word lines in an active condition for a predetermined time period and deactivating the word lines.
申请公布号 US6067261(A) 申请公布日期 2000.05.23
申请号 US19980127740 申请日期 1998.08.03
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;INFINEON TECHNOLOGIES NORTH AMERICA CORP. 发明人 VOGELSANG, THOMAS;WILSON, ADAM B.
分类号 G01R31/28;G01R31/26;G11C11/401;G11C11/406;G11C29/00;G11C29/06;G11C29/50;(IPC1-7):G11C7/00 主分类号 G01R31/28
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