Semiconductor device having an outgassed oxide layer and fabrication thereof

摘要

A semiconductor device having an oxide layer formed by outgassing oxide from a showerhead and an apparatus and process for fabricating such a device is provided. A process for fabricating a semiconductor device, in accordance with one embodiment of the invention, includes placing a substrate in a chamber having an oxide source showerhead and outgassing oxide from the showerhead to form an oxide layer on the substrate. The oxide layer may be used, at least in part, as a gate dielectric for a transistor device and may have a thickness as thin as one or two molecules. The oxide source showerhead may, for example, be formed from a block of quartz, thereby providing a silicon oxide layer on the substrate.