发明名称 Single digit line with cell contact interconnect
摘要 An integrated memory circuit comprises a plurality of memory cells and access transistors; and a digit line comprising conductive tabs extending from at least one side of a conductive digit line. The use of one digit line allows for a reduction in internal noise and coupling between digit line pairs. The use of one digit line also allows for a reduction in array size.
申请公布号 US6066870(A) 申请公布日期 2000.05.23
申请号 US19980109458 申请日期 1998.07.02
申请人 MICRON TECHNOLOGY, INC. 发明人 SIEK, DAVID D.
分类号 G11C7/12;G11C11/4091;G11C11/4097;H01L27/108;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 主分类号 G11C7/12
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