发明名称 |
Single digit line with cell contact interconnect |
摘要 |
An integrated memory circuit comprises a plurality of memory cells and access transistors; and a digit line comprising conductive tabs extending from at least one side of a conductive digit line. The use of one digit line allows for a reduction in internal noise and coupling between digit line pairs. The use of one digit line also allows for a reduction in array size.
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申请公布号 |
US6066870(A) |
申请公布日期 |
2000.05.23 |
申请号 |
US19980109458 |
申请日期 |
1998.07.02 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SIEK, DAVID D. |
分类号 |
G11C7/12;G11C11/4091;G11C11/4097;H01L27/108;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
G11C7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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