| 摘要 |
Charged-particle-beam optical systems are disclosed that are usable in projection-exposure apparatus employing a charged particle beam for projecting an image of an object (e.g., region of a lithographic mask) onto a sample (e.g., semiconductor wafer). Such an optical system comprises a deflection system for deflecting a trajectory of the charged particle beam such that a second-order derivative of the deflected trajectory is substantially constant in an object-side region extending from an object point to a crossover image point, and substantially constant in an image-side region extending from the crossover image point to an image point.
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