| 摘要 |
PROBLEM TO BE SOLVED: To polish wafers such as silicon wafers while the generation of foreign matter caused by abnormal friction between a polishing member and a wafer, and the generation of a scratch considered to be mainly caused by the foreign matter, are suppressed as much as possible. SOLUTION: When a wafer is polished, the rotation of a polishing surface plate and a polishing carrier and the loading of polishing load are gradually raised up to a specified speed of rotation and a specified polishing load while frictional resistance between the polishing cloth, a wafer, and the polishing carrier is maintained lower by performing ramp-up of the loading of polishing load and ramp-up of the rotation of the polishing surface plate and the polishing carrier independently, or the polishing surface plate and the polishing carrier are allowed to be familiar with a lubricant before the above mentioned ramp-up, or the ramp-up is performed while the lubricant is supplied to the polishing surface plate and the polishing carrier, or the polishing operation after completion of the above ramp-up is performed while the lubricant is supplied to the polishing surface plate and the polishing carrier, or these above processes are suitably combined with each other. |
