| 摘要 |
1,002,144. Semi-conductor devices. GENERAL ELECTRIC CO. Ltd. June 21, 1962 [July 4, 1961], No. 24102/61. Addition to 959,373. Heading H1K. Good thermal contact between a transistor mounted on a base member and a metallic envelope is obtained by means of a second member which is pressed into good thermal contact with the base member by a deformation of the envelope. As shown, Fig. 2, a transistor consists of a wafer 1 of N-type germanium with indium pellets 2, 3 fused to the surfaces to form emitter and collector electrodes. The wafer 1 is soldered to a generally rectangular base member 6 of tinned nickel between a pair of flanges 7, 8 and two tongues 9, 10 stamped out of the member. A hole 11 is provided to accommodate the emitter electrode. Three contact wires 15, 16, 17 are sealed into a glass disc sealed into a copper cup with a radial flange as in the parent Specification, and are connected to the electrodes of the transistor. A copper strip 19 forming the second member is placed round the assembly, resting on the glass disc and extending to the top of the member 6. A second copper cup 23 is then placed over the assembly and the flanges 24 cold-welded together. The welding causes a radially inward flow of metal which presses against the. strip 19 deforming it, as shown in Fig. 4, into contact with the base member, thus forming good thermal contacts between the base member 6 and the strip 19 and also between the strip 19 and the copper cups forming the envelope. |
