发明名称 |
Method of fabricating embedded gate electrodes |
摘要 |
A method of fabricating an embedded gate electrode is disclosed. The method includes the steps of: Providing a semiconductor substrate; forming a patterned etch resistant mask layer over the semiconductor substrate, wherein the patterned etch resistant mask layer has a first opening for a desired location of a trench; anisotropically etching through the patterned etch resistant mask layer and into the semiconductor substrate, hence forming the trench at the desired location; removing the patterned etch resistant mask layer; depositing a first insulating layer over the semiconductor substrate and filling up the trench; patterning a planarized first insulating layer to define a second opening for the embedded gate electrode; forming a second insulating layer at the bottom of the second opening; depositing a conductive layer over the second insulating layer and filling up the second opening, hence forming the embedded gate electrode; ion implanting the semiconductor substrate to form source/drain regions; forming a spacer on the sidewall of the embedded gate electrode; depositing a refractory metal layer over the entire exposing surface of a resulting structure; and annealing the refractory metal layer to form a silicide layer on the embedded gate electrode and elsewhere on the source/drain regions.
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申请公布号 |
US6066532(A) |
申请公布日期 |
2000.05.23 |
申请号 |
US19990419434 |
申请日期 |
1999.10.18 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN, CHIH-RONG;YEH, CHI-CHIN |
分类号 |
H01L21/336;H01L29/423;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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