| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for stably producing a continuous compound semiconductor single crystal in high reproducibility with low power consumption. SOLUTION: This method for producing a compound semiconductor single crystal has such advantages that, since the crystal pull-up space A disposed with a PBN crucible 31 inside a high-pressure vessel 16 as an oven and the heating space B disposed with a heater 7 are partitioned from each other with space-partitioning jigs 8, 9, 17 as walls, the amount of a feedstock to be charged can be increased without increasing the amount of the gas to be encapsulated inside the vessel; furthermore, heat can be moderately allowed to escape from crystal surface, therefore increasing no electric power to be charged into the heater 7 during crystal growth; as a result, the aimed continuous compound semiconductor single crystal can be produced stably and in high reproducibility; besides, when a crystal growth is to be conducted by encapsulating the crystal pull-up space A with a gas higher in thermal conductivity than the heating space B, heat is released from crystal surface more efficiently.
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