| 摘要 |
The invention relates to a distributed amplifier for wide band hyperfrequency signals of the type comprising: a plurality of basic amplifying cells (C1 to Cn) mounted in series, with at least one common drain line (Ld) and at least one common grid line (Lg), each cell comprising at least one field effect transistor (T1) which is common-source mounted and filtering elements, first biasing means for applying a first biasing voltage (Vd) to the common drain line, and second biasing means for applying a second biasing voltage to the common grid line. According to the main feature of the invention, the first biasing means comprise a plurality of auxiliary field effect transistors (T'1 to T'n) functioning in saturable load mode and whose respective sources (S'1 to S'n) are distributively connected up to the common drain line (Ld) and whose respective drains (D'1 to D'n) receive in series the first biasing voltage (Vd). |
