Method for the chemical vapor deposition of copper-based films and copper source precursors for the same

摘要

A method for depositing copper-based films and a copper source precursor for use in the chemical vapor deposition of copper-based films are provided. The precursor includes a mixture of at least one ligand-stabilized copper (I) beta -diketonate precursor; and at least one copper(II) beta -diketonate precursor. The method includes introducing into a deposition chamber: (i) a substrate; (ii) a copper source precursor in a vapor state including a mixture of at least one ligand-stabilized copper (I) beta -diketonate precursor; and at least one copper(II) beta -diketonate precursor; and (iii) at least one transport gas, different than said copper source precursor. The reaction substrate temperature is maintained at from about 50 DEG C. to about 500 DEG C. for a period of time sufficient to deposit a copper-based film on said substrate.