CVD reactor used in the production of the semiconductor wafers has upper and lower reactor chambers provided with a gas feed line and gas removal line

摘要

CVD reactor has an upper reactor chamber (2), a lower reactor chamber (3) and a separating wall (4) having a circular hole (5) in which a collar (6) is positioned for a wafer. The upper and lower reactor chambers are provided with a gas feed line (11, 13) and gas removal line (12, 14). An Independent claim is also included for a process for the production of a semiconductor wafer provided with an epitaxial layer comprising: (a) loading the reactor with an upper reactor chamber (2), a lower reactor chamber (3) and a separating wall (4) having a circular hole (5) in which a collar (6) is positioned for a wafer; (b) heating the wafer using a heat source; (c) depositing a protective layer on the back side of the wafer; (d) depositing an epitaxial layer on the front side of the wafer; and (e) removing the wafer with the epitaxial layer from the reactor.