| 摘要 |
The invention comprises copper chemical-mechanical polishing processes using fixed abrasive polishing pads, and copper layer chemical-mechanical polishing solutions specifically adapted for chemical-mechanical polishing with fixed abrasive pads. In one implementation, processes are described for pH's of 7.0 or greater. In one implementation, processes are described for pH's of 7.0 or less. In one implementation, a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad comprises a copper oxidizing component present at from about 1 % to 15 % by volume, a copper corrosion inhibitor present at from about 0.01 % to 2 % by weight, and a pH of less than or equal to 7.0. In one implementation, a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad comprises a copper oxidizing component present at from about 0.1 % to 15 % by volume, a copper complexing agent present at from about 0.1 % to 15 % by volume, and a pH of greater than or equal to 7.0.
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