发明名称 METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT WITH WIRING PARTLY EXTENDING IN THE SUBSTRATE AND SEMICONDUCTOR COMPONENT PRODUCED ACCORDING TO SAID METHOD
摘要 The invention relates to a method for producing a wiring extending at least partly in a substrate, according to which at least one conductive connection extending in the semiconductor substrate and at least one conductive connection extending on the semiconductor substrate are provided for. The semiconductor component provided for in the invention permits applications requiring a high degree of security against external manipulation.
申请公布号 WO0028593(A1) 申请公布日期 2000.05.18
申请号 WO1999DE03603 申请日期 1999.11.11
申请人 INFINEON TECHNOLOGIES AG;BRAUN, HELGA;KAKOSCHKE, RONALD;STOKAN, REGINA;PLASA, GUNTHER;KUX, ANDREAS 发明人 BRAUN, HELGA;KAKOSCHKE, RONALD;STOKAN, REGINA;PLASA, GUNTHER;KUX, ANDREAS
分类号 H01L23/52;H01L21/285;H01L21/3205;H01L21/8238;H01L23/58;H01L27/092 主分类号 H01L23/52
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