发明名称 HIGH DENSITY INTEGRATED CIRCUIT
摘要 The invention provides a high density integrated circuit (IC) in which there are a plurality of circuit layers integrated in one chip in vertical direction. Each of said circuit layers has one certain independent memory, logic and/or analog function. Among these layers, a plurality of vias are provided to connect these different layers. Also, the invention provides an improved high density IC including a memory and a wiring divided area for wiring. With a buffer, the operating speed can be increased. With a field programmable memory array as a redundant array, the product yield can be raised.
申请公布号 WO0028595(A1) 申请公布日期 2000.05.18
申请号 WO1999CN00171 申请日期 1999.10.28
申请人 ZHANG, SHIXI 发明人 ZHANG, SHIXI
分类号 H01L27/06;(IPC1-7):H01L27/06;H01L27/092;H01L27/10;H01L27/108 主分类号 H01L27/06
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