| 摘要 |
<p>A nonvolatile memory cell (10a, 10b) which is highly scalable includes a cell formed in a triple well (44, 46). A pair of sources (32, 34) for a pair of cells on adjacent word lines (36) each acts as the emitter of a lateral bipolar transistor (68). The lateral bipolar transistor (68) of one cell (10) operates as a charge injector for the other cell (10). The charge injector provides carriers for substrate hot carrier injection onto a floating gate (28b).</p> |
