METHOD FOR FORMING LOW-IMPEDANCE HIGH-DENSITY DEPOSITED-ON-LAMINATE STRUCTURES HAVING REDUCED STRESS
摘要
A method for forming low-impedance high density deposited-on-laminate (D/L) structures (10) having reduced stress features reducing metallization present on the laminate printed circuit board (12). In this manner, reduced is the force per unit area exerted on the dielectric material (30) disposed adjacent to the laminate material (16) which is typically present during thermal cycling of the structure.
申请公布号
WO0007222(A3)
申请公布日期
2000.05.18
申请号
WO1999US17434
申请日期
1999.07.30
申请人
KULICKE & SOFFA HOLDINGS, INC.
发明人
STRANDBERG, JAN, I.;CHAZAN, DAVID, J.;SKINNER, MICHAEL, P.