Transmission mask and mask-exposure arrangement and method for a projection lithography system

摘要

A mask-exposure system used in a projection lithography system comprises a mechanism for positioning a transmission mask (MK) in at least one predetermined exposure position intersecting the path of a shaped beam (EB) of radiation. A radiation-cooling structure (CL) and a radiation-shield (RS) are positioned around the optical path of the beam and have absorbing surfaces for the absorption of thermoradiation from the mask (MK). The radiation-shield (RS) is held at the operating temperature of the mask and has an absorbing surface facing the mask within a predetermined distance. The radiation-cooling structure is held at a temperature below the operating temperature of the mask
and is positioned in the vicinity of the radiation-shield (RS) opposite to the mask and has an absorbing surface facing an irradiated portion of the mask (MK). Also provided in a transmission mask comprising a wafer mask with at least one membrane with a stencil pattern and a lightly reflective surface layer. A method of producing such a wafer is also provided.