发明名称 |
Semiconductor device having a metallic capacitor electrode and ohmic contact and method of fabrication |
摘要 |
A semiconductor device includes a capacitor having a pair of electrodes opposite to each other through a dielectric layer, and an element other than the capacitor, both of which are formed on a semiconductor substrate. An ohmic electrode of the element and one of the electrodes of the capacitor are formed of the same metallic material. <IMAGE> |
申请公布号 |
EP0962981(A3) |
申请公布日期 |
2000.05.17 |
申请号 |
EP19990109755 |
申请日期 |
1999.05.18 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
YOKOI, YASUSHI |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L27/06;H01L27/095 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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