发明名称 Semiconductor device having a metallic capacitor electrode and ohmic contact and method of fabrication
摘要 A semiconductor device includes a capacitor having a pair of electrodes opposite to each other through a dielectric layer, and an element other than the capacitor, both of which are formed on a semiconductor substrate. An ohmic electrode of the element and one of the electrodes of the capacitor are formed of the same metallic material. <IMAGE>
申请公布号 EP0962981(A3) 申请公布日期 2000.05.17
申请号 EP19990109755 申请日期 1999.05.18
申请人 MURATA MANUFACTURING CO., LTD. 发明人 YOKOI, YASUSHI
分类号 H01L27/04;H01L21/02;H01L21/822;H01L27/06;H01L27/095 主分类号 H01L27/04
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