| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which an abnormal leak current does not occur in the semiconductor device such as transistors, etc., without causing crystal defects within a semiconductor substrate. SOLUTION: After an interlayer insulation film 100 is formed prior to lamp annealing, a lamp light absorption film 110 is deposited to thereafter lamp-anneal processing. Thus, lamp lights from an upper part of a semiconductor substrate in the lamp annealing are absorbed by the light absorbing film, and the lamp lights from a lower part of the semiconductor substrate are absorbed by the semiconductor substrate as it is. For this reason, the light absorbing film and semiconductor substrate are heated, and impurity ions are activated by radiant heat. As described above, since activation annealing is performed by use of the radiant heat, it is possible to reduce a difference in temperatures between an end of an activation region and an element isolation region, similarly to the case of using a diffusion furnace.
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