| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon oxide film which is superior in characteristics aspects such as dielectric strength and step-coverage, etc., for improved yield of TFT, causes no problem in handling or in cost, and is used for both a gate oxide film and interlayer insulating film. SOLUTION: With the use of a two-frequency exciting plasma CVD device 1, wherein one electrode 20a constituting a tuning capacitor 2 of a high-frequency electrode side matching box 9 is the high-frequency electrode 3 while the high-frequency electrode 3, a susceptor electrode 6, and two matching boxes 9 and 17 for impedance matching between these electrodes and a power source are provided, a substrate which is to be processed is placed on the susceptor electrode 6, the high-frequency electrode 3 and susceptor electrode 6 are applied with high-frequency electric power, while a plasma is generated using a reactive gas whose main reactive gas is a mixed gas of SiH4 gas and N2O gas, so that a silicon oxide film is formed on a substrate 5 to be processed.
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