| 摘要 |
PROBLEM TO BE SOLVED: To read out or write in at a high speed against a memory cell on the same word line, in an FCRAM(trade mark, fast cycle random access memory) for which the speed of the random access operation is increased. SOLUTION: A 1st stage 100 for decoding a command, a 2nd stage 200 for activating a sense amplifier SA and a 3rd stage 300 for inputting/outputting data are constituted with a pipe line. In the FCRAM transferring the plural data in parallel between the sense amplifier SA and the 3rd stage 300, by responding to the normal read or write command, the reset operation is executed in the manner of non-activating the sense amplifier SA after the data are transferred in parallel between the sense amplifier SA and the 3rd stage 300. By responding to the 2nd read or write command, activation of the sense amplifier SA is continued without the reset operation after the data are transferred in parallel between the sense amplifier SA and the 3rd stage 300. Then, activation of the sense amplifier is obviated, and the parallel transfer of the plural data is executed at a high speed against the sense amplifier in the state continuing the activation.
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