发明名称 Semiconductor device and method for fabricating the same, memory core chip and memory peripheral circuit chip
摘要 The semiconductor device of the invention includes a plurality of circuit blocks including a first circuit block and a second circuit block, a block parameter of the first circuit block being different from a block parameter of the second circuit block. In the semiconductor device, the first circuit block is formed on a first semiconductor chip, and the second circuit block is formed on a second semiconductor chip and is electrically connected with the first circuit block.
申请公布号 US6064585(A) 申请公布日期 2000.05.16
申请号 US19980140968 申请日期 1998.08.26
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO. 发明人 MORI, TOSHIKI;NAKAO, ICHIRO;FUJITA, TSUTOMU;SEGAWA, REIJI
分类号 G11C5/00;G11C5/02;(IPC1-7):G11C5/06 主分类号 G11C5/00
代理机构 代理人
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