| 摘要 |
PROBLEM TO BE SOLVED: To generate large-area, uniform, and flat high-density low-potential plasma by providing circular slots that are provided on a flat H surface with a specific interval by punching along the traveling direction of microwaves. SOLUTION: A substrate 112 to be treated is installed on a substrate support 113 and is heated to a desired temperature using a heater 114, and the inside of a plasma treatment chamber 101 is evacuated via an exhaust system. Then, a gas for plasma treatment is introduced into the plasma generation chamber 101 with a specific flow rate via a treatment gas introduction port 115 and is retained at a specific pressure. Then, a desired power is introduced into a flat annular waveguide 103 from an introduction part 104 from a microwave power supply, and the introduced microwave is divided into two portions by the introduction part 104 and is propagated left and right in a propagation space 105. At this time, a pair of circular slots 106A and 106B that are provided with a specific interval by punching are provided on the H surface of the waveguide 103 along the traveling direction of microwaves. |
