| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device having an electrode bonding pad in which trouble is not generated, when a wafer test is performed by bringing a probe pin into contact with the wafer, and its manufacturing method. SOLUTION: A metal layer 4 composed of Ni is formed on an electrode wiring 2 formed on the uppermost layer of an IC chip, a first Sn layer 5, a Pb layer 6 and a second Sn layer 7 are laminated in this order on the metal layer 4, and an electrode bonding pad turning to a bump electrode is formed. An oxide film formed on the surface of the second Sn layer 7 is liable to be broken and stresses which are applied to the electrode bonding pad side by a probe pin and stress applied to the probe pin side can be restrained small. Since the metal layer constituting the electrode bonding pad acts as a buffer part member for stress, pin-type abnormal growth of metal can be restrained.
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