| 摘要 |
PROBLEM TO BE SOLVED: To obtain a negative type silicone ladder resin composition having a low stress property and capable of forming a thick film by including a specific resin and a photosensitive cross-linking agent or a photopolymerization initiator. SOLUTION: This high voltage resistant interlayer-insulating film material composition for a semiconductor is obtained by including (A) a silicone ladder resin having >=1,000 weight-average molecular weight, of the formula [R1, R2 are each an aryl, H, an aliphatic alkyl or a functional group having an unsaturated bond; R3 to R6 are each H, an aryl, an aliphatic alkyl, a trialkylsilyl or a functional group having an unsaturated group; (n) is an integer], and capable of forming a thick film by increasing a ratio of a long chain alkyl group or an aryl group introduced into the R1 and R2 of its side chain, and (B) a photosensitive cross-linking agent or a photopolymerization initiator. The above composition can be used as an interlayer-insulating film, etc., for maintaining the voltage resistant insulation of a semiconductor element such as a power IC, etc., loaded in a high voltage resistant motor.
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